Designed for broadband operationHigh efficiencyIntegrated dual sided ESD protectionExcellent ruggednessHigh power gainExcellent reliabilityEasy power controlExcellent stability, Broadcast transmitter applications in the UHF bandDigital and analog broadcastingIndustrial, scientific and medical applications, RF Power Transistor, GaN, 1.2 to 1.4 GHz, 21.3 dB, 61.8 dBm, NI-1230 ( Eared), RF Power Transistor, 0.40 to 0.86 GHz, 30 W, 20.2 dB, 50 V, TO270, LDMOS. Bipolar Junction Transistor. LDMOS, GaAs and GaN technologies are available. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from 400 MHz to 860 MHz. Maximum frequencies range to 25 GHz, with output power up to 2000 Watts. TRANS PNP 600V 0.5A SOT-223.
Huge Range of Power Transistors; Wide Selection of Current Ratings and Packages; Large … Please use the RF Power Transistor filters below to select your product, or call us for availability and pricing at 1 (877) 367-7369. LIST Last Update. MOSFET (Metal-oxide-semiconductor field effect transistor) Gain in dB is 15.2 @ 1880 MHz, 30 V, SOT1799-3, LDMOS, RF Power Transistor, 2.11 to 2.17 GHz, 240 W, 19.7 dB, 28 V, SOT1275-1, LDMOS, RF Power Transistor, 0.595 to 0.851 GHz, 602 W P3dB, Typ Gain in dB is 17.5 @ 623 MHz, 48 V, SOT1816-1, LDMOS, RF Power Transistor, 2.496 to 2.69 GHz, 500 W P3dB, Typ Gain in dB is 14.5 @ 2590 MHz, 48 V, SOT1799-6, GaN, RF Power Transistor, 0.001 to 1.5 GHz, 100 W, 19 dB, 50 V, SOT1483-1, LDMOS, RF Power Transistor, 0.136 to 0.52 GHz, 70 W, 18.5 dB, 12.5 V, SOT1736-2, LDMOS, RF Power Transistor, 2.5 to 2.7 GHz, 14.5 dB, 46.8 dBm, DFN, 7 x 6.5, RF Transistor, GaN, 3.4 to 3.6 GHz, 15 dB, 47 dBm, DFN, 7 x 6.5 mm, RF Power Transistor, 0.40 to 0.86 GHz, 450 W, 22.5 dB, 50 V, SOT1121B, LDMOS, RF Power Transistor, 0.136 to 0.52 GHz, 8 W, Typ Gain in dB is 14 @ 520 MHz, 7.5 V, LDMOS, RF Power Transistor, 0.40 to 0.86 GHz, 450 W, 22.5 dB, 50 V, SOT1121A, LDMOS, RF Power Transistor, 1.805 to 1.88 GHz, 720 W, 16 dB, 30 V, SOT1258-4, LDMOS, RF Power Transistor, 2.11 to 2.17 GHz, 600 W, 15.4 dB, 30 V, SOT1258-4, LDMOS, RF Power Transistor, 2.11 to 2.17 GHz, 300 W, 30 V, SOT1275-1, LDMOS, RF Power Transistor, 2.11 to 2.17 GHz, 300 W, 30 V, SOT1275-1, LDMOS, RF Power Transistor, 1.452 to 1.492 GHz, 350 W, 30 V, 18 dB, SOT1275-1, LDMOS, RF Power Transistor, 0.40 to 0.80 GHz, 800 W, 20.5 dB, 50 V, SOT539A, LDMOS, RF Power Transistor, 2.496 to 2.69 GHz, 34 W Avg, 48 V, SOT1799-6, GaN, RF Power Transistor, 0.001 to 1.5 GHz, 30 W, 21 dB, 50 V, SOT1483-1, LDMOS, RF Transistor, 2 GHz, 21.5 dB, 0.75 dB NF, SOT143B, Silicon, RF Power Transistor, 0.0018 to 0.40 GHz, 2000 W, 27.4 dB, 65 V, OMP1230, LDMOS, RF Power Transistor, 0.0018 to 0.45 GHz, 2000 W, 27.4 dB, 65 V, OMP1230, LDMOS, RF Power Transistor, 1.93 to 2 GHz, 570 W, 15 dB, 30 V, SOT1258-5, LDMOS, RF Power Transistor, 1.805 to 1.88 GHz, 630 W, 16.8 dB, 30 V, SOT1258-4, LDMOS, RF Power Transistor, 3.4 to 3.6 GHz, 14 W Avg., 14 dB, 48 V, SOT1826-1, GaN, RF Power Transistor, 1.8 to 2.2 GHz, 6.3 W Avg, Typ.
1V @ 10mA, 100mA. Ampleon's 30 W LDMOS driver transistor for broadcast, class-AB transmitter and industrial applications. Our RF Power Transistors are manufactured by Ampleon, Qorvo, NXP, Microsemi and P1dB.
JFET (junction field effect... MOSFET (Metal-oxide-semiconductor field effect transistor) JFET … Gain in dB is 28.7 @1840 MHz, 28 V, SOT1981-1, LDMOS, RF Power Transistor, 2.4 to 2.5 GHz, 20 W, 28 dB, 32 V, OMP400, LDMOS, RF Power Transistor, 0.001 to 0.425 GHz, 1600 W, 55 V, SOT539AN, LDMOS, RF Power Transistor, 3.2 to 4 GHz, 1.8 W, Typ Gain in dB is 27.8 @ 3800 MHz, 28 V, SOT1730-2, LDMOS, RF Power Transistor, 4.4 to 5.0 GHz, 15.4 dB, DFN overmold package, RF Power Transistor, 0.135 to 0.52 GHz, 3 W, Typ Gain in dB is 15 @ 520 MHz, 12.5 V, SOT1811-1, LDMOS, RF Power Transistor, 0.616 to 0.96 GHz, 630 W, 18 dB, 48 V, SOT1250-4, LDMOS. Please use the RF Power Transistor filters below to select your product, or call us for availability and pricing at 1 (877) 367-7369. PNP. TRANS PNP 30V 1.5A SOT-23. A BJT is a bipolar junction transistor, which is capable of handling two polarities (holes... Static Induction Transistor. RF Power Transistor, GaN, 2.5 to 2.7 GHz, 15 dB, 50.5 dBm, DFN, 7 x 6.5 mm, RF Power Transistor, GaN, DC to 5 GHz, 19 dB, 43 dBm, 48 V, DFN, 4.5 x 4.0, RF Power Transistor, 0.001 to 0.45 GHz, 1600 W, 27.4 dB, 55 V, OMP1230-4F-1, LDMOS, RF Power Transistor, 1.805 to 2.2 GHz, 56 W Avg, Typ Gain in dB is 16 @ 1805 MHz, 48 V, SOT1826-1, GaN, RF Power Transistor, 1.805 to 1.88 GHz, 56 W Avg., Typ. Family of Transistors Bipolar Junction Transistors (BJT) Field Effect Transistors (FET) 500mA. How to choose a replacement for a bipolar transistor TOTAL: 124323 transistors. LDMOS, GaAs and GaN technologies are available. Our RF Power Transistors are manufactured by Ampleon, Qorvo, NXP, Microsemi and P1dB. TO-261-4, TO-261AA. Maximum frequencies range to 25 GHz, with output power up to 2000 Watts. Transistor Power Gain Voltage Frequency Mode Case Pin 123; 2N3375: 10W: 5dB: 28V: …
Gain in dB is 28.7 @1840 MHz, 28 V, SOT2000-1, LDMOS, RF Power Transistor, 1.8 to 2.2 GHz, 6.3 W Avg, Typ. 600V. 2STR2230.
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